Plasma Cleaning for W Polymetal Gate

Alex Kabansky; Harry Lee

doi:10.4028/www.scientific.net/SSP.103-104.59

Paper Titles

Process, Environmental & Economical Considerations to Implement Single Wafer Cleaning Tools in 300mm Wafer Fabs
p.41

In Situ Wafer Processing for Next Generation Devices
p.45

Organic Contamination Control in Silicon Surface Processing
p.49

Application of UV/VIS-Spectroscopy for Determination of Complexing Agent Stability in APM and Like Mixtures Thereof
p.55

Plasma Cleaning for W Polymetal Gate
p.59

Development of New Batch-Type Plasma Assisted NOR (Native-Oxide-Removal) Dry Cleaning Equipment
p.63

Evaluation of Wafer Drying Methods for GIGA-LEVEL Device Fabrication
p.67

Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography
p.71

Performance of a Linear Single Wafer IPA Vapour Based Drying System
p.75

HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Plasma Cleaning for W Polymetal Gate

Plasma Cleaning for W Polymetal Gate

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

59-62

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.59

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Online since:

April 2005

Authors:

Alex Kabansky, Harry Lee

Keywords:

Defect, Energy Dispersive X-Ray (EDX), Plasma Cleaning, Polymetal Gate, Residual Film, Selective Oxidation, TEM

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