In Situ Wafer Processing for Next Generation Devices

Ismail Kashkoush; Lewis Liu; Nick Yialamas; R. Novak

doi:10.4028/www.scientific.net/SSP.103-104.45

Paper Titles

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
p.27

Surface Preparation Techniques for High-k Deposition on Ge Substrates
p.31

Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement
p.37

Process, Environmental & Economical Considerations to Implement Single Wafer Cleaning Tools in 300mm Wafer Fabs
p.41

In Situ Wafer Processing for Next Generation Devices
p.45

Organic Contamination Control in Silicon Surface Processing
p.49

Application of UV/VIS-Spectroscopy for Determination of Complexing Agent Stability in APM and Like Mixtures Thereof
p.55

Plasma Cleaning for W Polymetal Gate
p.59

Development of New Batch-Type Plasma Assisted NOR (Native-Oxide-Removal) Dry Cleaning Equipment
p.63

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In Situ Wafer Processing for Next Generation Devices

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

45-48

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.45

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Online since:

April 2005

Authors:

Ismail Kashkoush, Lewis Liu, Nick Yialamas, R. Novak

Keywords:

Dilute Chemicals, Etch Rate, In Situ, Particle Removal, RCA Cleans, Silicon Consumption, True Adders, Uniformity

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References

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