Enhanced Surface Preparation Techniques for the Si/High-k Interface
p.11
p.11
Uniform Ultrathin Oxide Growth for High-k Preclean
p.15
p.15
On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
p.19
p.19
Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
p.23
p.23
A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
p.27
p.27
Surface Preparation Techniques for High-k Deposition on Ge Substrates
p.31
p.31
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement
p.37
p.37
Process, Environmental & Economical Considerations to Implement Single Wafer Cleaning Tools in 300mm Wafer Fabs
p.41
p.41
In Situ Wafer Processing for Next Generation Devices
p.45
p.45
A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 103-104)
Pages:
27-30
Citation:
Online since:
April 2005
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Сopyright:
© 2005 Trans Tech Publications Ltd. All Rights Reserved
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