Enhanced Surface Preparation Techniques for the Si/High-k Interface

Joel Barnett; Chadwin D. Young; Naim Moumen; Gennadi Bersuker; Jeff J. Peterson; George A. Brown; Byoung Hun Lee; Howard R. Huff

doi:10.4028/www.scientific.net/SSP.103-104.11

Paper Titles

Preface, Committees

High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation
p.3

UV Activated Surface Preparation of Silicon for High-k Dielectric Deposition
p.7

Enhanced Surface Preparation Techniques for the Si/High-k Interface
p.11

Uniform Ultrathin Oxide Growth for High-k Preclean
p.15

On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
p.19

Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
p.23

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
p.27

Surface Preparation Techniques for High-k Deposition on Ge Substrates
p.31

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Enhanced Surface Preparation Techniques for the Si/High-k Interface

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.11

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Online since:

April 2005

Authors:

Joel Barnett, Chadwin D. Young, Naim Moumen, Gennadi Bersuker, Jeff J. Peterson, George A. Brown, Byoung Hun Lee, Howard R. Huff

Keywords:

Charge Trapping, High-k, Interface

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References

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[2] H.R. Huff, et al., Microelectronic Engineering, 69, No. 2-4 (September 2003), pp.152-167.

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[3] Gennadi Bersuker, et al., JJAP. 43 (2004), pp.7899-7902.

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[4] Chadwin D. Young, et al., to be published in Microelectronics Reliability.

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[5] Gennadi Bersuker, et al., Mat. Res. Soc. Symp Proc. 811 (2004), pp.31-35

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