On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Bart Onsia; Matty Caymax; Thierry Conard; Stefan De Gendt; F. De Smedt; A. Delabie; C. Gottschalk; Marc Heyns; M. Green; S. Lin; Paul W. Mertens; W. Tsai; Chris Vinckier

doi:10.4028/www.scientific.net/SSP.103-104.19

Paper Titles

High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation
p.3

UV Activated Surface Preparation of Silicon for High-k Dielectric Deposition
p.7

Enhanced Surface Preparation Techniques for the Si/High-k Interface
p.11

Uniform Ultrathin Oxide Growth for High-k Preclean
p.15

On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
p.19

Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
p.23

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
p.27

Surface Preparation Techniques for High-k Deposition on Ge Substrates
p.31

Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement
p.37

HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104On the Application of a Thin Ozone Based Wet...

On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

19-22

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.19

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Online since:

April 2005

Authors:

Bart Onsia, Matty Caymax, Thierry Conard, Stefan De Gendt, F. De Smedt, A. Delabie, C. Gottschalk, Marc Heyns, M. Green, S. Lin, Paul W. Mertens, W. Tsai, Chris Vinckier

Keywords:

Atomic Layer Deposition ALD, High-k, Interface, Oxide, Ozone

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References

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