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Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
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A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
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On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

19-22

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.19

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Online since:

April 2005

Authors:

Bart Onsia, Matty Caymax, Thierry Conard, Stefan De Gendt, F. De Smedt, A. Delabie, C. Gottschalk, Marc Heyns, M. Green, S. Lin, Paul W. Mertens, W. Tsai, Chris Vinckier

Keywords:

Atomic Layer Deposition ALD, High-k, Interface, Oxide, Ozone

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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