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Surface Preparation Techniques for High-k Deposition on Ge Substrates

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

31-36

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.31

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Online since:

April 2005

Authors:

Sven Van Elshocht, A. Delabie, B. Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Riikka Puurunen, Olivier Richard, Jan Van Steenbergen, Chao Zhao, Marc Meuris, Marc Heyns

Keywords:

Atomic Layer Deposition ALD, Germanium, HfO2, MOCVD, Surface Preparation

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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