Preface, Committees
High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation
p.3
p.3
UV Activated Surface Preparation of Silicon for High-k Dielectric Deposition
p.7
p.7
Enhanced Surface Preparation Techniques for the Si/High-k Interface
p.11
p.11
Uniform Ultrathin Oxide Growth for High-k Preclean
p.15
p.15
On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
p.19
p.19
Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
p.23
p.23
A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
p.27
p.27
Surface Preparation Techniques for High-k Deposition on Ge Substrates
p.31
p.31
Preface, Committees
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 103-104)
Online since:
April 2005
Сopyright:
© 2005 Trans Tech Publications Ltd. All Rights Reserved
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