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Determination of PPD in Hair Dyes Collected from Local Markets in El-Bieda City - Libya Galal Elmanfe1,3,a*, Osama Khreit 2,3,b and Omukalthum Abduljalil3,c 1Chemistry department, Faculty of Science, Omar Al-Mukhtar University, El-Bieda, P.O 919, Libya 2Pharmacology , Toxicology and Physiology department, Faculty of Veterinary, Omar Al-Mukhtar University, El-Bieda, P.O 919, Libya 3Almukhtar Centre of Rerearch, Consaltation, Technique Services and training,Omar Al-Mukhtar University, El-Bieda, P.O 919, Libya a*galal.elmanfe@omu.edu.ly, bosama.khreit@omu.edu.ly, cearthmooninsky@gmail.com Keywords: PPD ; Hair Dyes ; Methanol and HPLC.
In the presented study, ten hair dye samples were collected from local markets in El-Bieda - Libya.
Samples collection : Ten samples were collected from local markets in El-Beida- Libya.
Al-Suwaidi and H.
El Karni, T.

The ultimate tensile strength (UTS) and the elongation to fracture (EL) determined from these curves are indicated in Figure 2b, in comparison with those for conventional Al-5083 (O temper) [9] and an ultrafine-grained Al-5083 without reinforcing particles [10].
(b) The ultimate tensile strength (UTS, solid lines with solid circles) and the elongation to fracture (EL, dashed lines with solid circles) determined from the stress-strain curves in (a), in comparison with the UTS (solid lines with open circles) and EL (dashed lines with open circles) for conventional (O temper) Al-5083 [9] and the compressive flow stress for an ultrafine-grained Al-5083 without reinforcing particles (solid line with open triangles) [10].
At 473 K, the nanostructured Al-5083/SiCp composite reached a maximum in EL.
The EL minimum at an elevated temperature due to GBS has also been reported for a titanium alloy [18].
The decrease in EL at 473 to 673 K is due to the activation of grain boundary sliding in the ultrafine-grained Al-5083 matrix.

The Al acceptor concentration and thickness of the p+-SiC homoepitaxial layer were 10 19 cm-3 and 10 µm, respectively.
Ti/Al and Ni contacts were used for n+-GaN and p+-SiC, respectively.
The EL spectrum is shown in Fig. 3 (a).
The observed EL peaks are attributed to band-edge emission (2.9eV) and free electron-to-Al acceptor recombination (2.5eV) of 6H-SiC.
To simplify device processing, Ti/Al contacts were used for both the n +-GaN emitter and p +-SiC base layers.

Due to the large number of controlling variables, it is difficult to accurately predict the mechanical properties of Al alloys from these variables.
Separate models were developed for YS, UTS and El%.
The error associated with %El for the permanent mould is higher than that for the sand mould.
The average value of %El is higher in the permanent mould than it is in the sand mould.
Standard Error of the Estimate (Se) Relative Standard Error (RSE) Model Sand Mould Permanent Mould Sand Mould Permanent Mould YS UTS %El YS UTS %El YS UTS %El YS UTS %El Linear 37.6 29.4 1.5 27.4 20.9 2.7 15.6% 10.0% 34.8% 12.7% 7.1% 19.3% Nonlinear 21.8 15.1 1.0 20.3 14.7 2.1 9.0% 5.2% 22.4% 9.5% 5.0% 16.1% ANN 7.7 5.7 0.4 8.1 5.6 0.9 3.2% 1.9% 10% 3.7% 1.8% 6.0% It can be seen in Table 1 that RSE for sand mould is significantly higher than those of the permanent mould.

Glass ITO α－NPD Alq bis-diphenylquinoxaline LiF/Al Fig. 1.
Structure of EL device and molecular structure of organic materials used In order to evaluate the performance of this compound as electron-transporting material, organic EL devices having a structure of ITO / NPD(50nm) / Alq (30nm) / bis-diphenylquinoxaline (30nm) / LiF(0.5nm) / Al(100nm)(Fig. 1) were fabricated.
Bulovic, et al.
[4] Li Tingxi, Fu Long, Yu Wenwen, et al.
[8] Li Tingxi, Gao Susu, Sui Peng, et al.

Monodispersed CdSe nanoparticles were prepared by chemical method described by Zhang et al.[40].
Sharma et al. [32] have also reported the effect of ratios of Cd:Se in CdSe nanoparticles.
Rincon et al have also reported the hexagonal wurtzite structure for ZnS films with some low intensity peaks of ZnO (zincite) [38].
Similar results are reported by Kumbhojkar et al. [38] on mercaptoethanol capped ZnS nanoparticles.
Norris, A.L.

The red organic light-emitting devices (OLED) A ITO/PEDOT: PSS/PBD: p1-30/AlQ3/LiF/Al and B ITO/PEDOT: PSS/PBD: p1-30/BCP/AlQ3/LiF/Al were fabricated.
Device A ITO/PEDOT: PSS/PBD: p1-30/AlQ3/LiF/Al and Device B ITO/PEDOT: PSS/PBD: p1-30/BCP/AlQ3/LiF/Al were fabricated.
EL spectra and CIE coordinates were recorded by using SpectroScan PR 655 photometer (Photo Research).
EL spectra, CIE coordinates, current density and luminance curves were seen in Fig. 6 (a, b, c, d).
The red Device A ITO/PEDOT: PSS/PBD: p1-30/AlQ3/LiF/Al and Device B ITO/PEDOT: PSS/PBD: p1-30/BCP/ AlQ3/LiF/Al were fabricated.

The hydrochar derived from CF and EL was designated as CF-250 and EL-250, respectively.
Subsequently, the metal concentrations (K, Na, Ca, Fe, Si, Al, Ti and Mg) in the solution were quantified by inductively-coupled plasma optical emission spectrometer (ICP-OES Perkin Elmer 3000DV (USA)).
It was obvious that the metal contents of hydrochars were lower than raw biomass; the K, Na, Mg and Al content changed drastically and the reductions of the Ca, Fe, Si and Ti content were relatively small.
The Is values of CF-250 and EL-250 were 0.051 and 0.35, respectively, which were lower than their raw biomass (0.14 for CF and 0.51 for EL, respectively).
So a low tendency of slagging for CF, CF-250, EL and EL-250 were found.

By comparation, with the help of Al, higher crystalline volume fraction and lower in-plane stress can be achieved at the same laser energy (2.9mJ).
The results show that laser energy threshold can be decreased and crystalline fraction can be improved with the help of Al.
So, better crystallization effect can be achieved with the help of Al, and crystalline volume fraction depends on the laser energy.
It is in accordance with the results of Raman spectra. 2 EL-SMIC,2.4mJ As-deposited a-Si 3 EL-SMIC,2.9mJ 4 EL-SMIC,3.2mJ Figure 3 AFM of as-deposited a-Si and EL-SMIC samples treated with different laser energies Figure 3 shows AFM graphs of as-deposited a-Si and EL-SMIC samples under different laser energies.
The results reveal that higher crystalline volume fraction and lower in-plane stress can be achieved while Al is introduced.

Keywords: 3C-SiC/6H-SiC heterostructure, I-V, EL, TEM.
I-V and EL characteristics of the diode mesa-structures of height 4 and 16 microns were taken.
EL characterization.
All structures are characterized by non-uniform EL over the diode area.
Analysis of the EL characteristics suggests that: a) the EL observed is injection EL, at least at high currents, whatever the polarity of the voltage applied to the Ni contact; b) the green peak with a maximum at 2.3 eV in the case of negative voltage polarity (minus at the Ni contact) is probably the same peak as that due to free exciton annihilation in 3C-SiC pn structure on the base of high-quality epitaxial 3C-SiC layer with low densities of DPBs [2] (curve 4 at Fig.2, right); c) the spectral position of the green peak (with maximum at 2.35-2.5 eV) in the case of positive voltage polarity (plus at the Ni contact) is close to that of the so-called "defect" injection EL in 6H-SiC pn structures (curve 5 at Fig.2, right) but its origin is unclear; d) the peaks at hν of about 2.72 eV and 2.9 eV in the case of positive voltage polarity (plus at the Ni contact) are well-known EL peaks of 6H-SiC, which are due to the conduction band - Al level transition and free