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Keywords: 3C-SiC/6H-SiC heterostructure, I-V, EL, TEM.
I-V and EL characteristics of the diode mesa-structures of height 4 and 16 microns were taken.
EL characterization.
All structures are characterized by non-uniform EL over the diode area.
Analysis of the EL characteristics suggests that: a) the EL observed is injection EL, at least at high currents, whatever the polarity of the voltage applied to the Ni contact; b) the green peak with a maximum at 2.3 eV in the case of negative voltage polarity (minus at the Ni contact) is probably the same peak as that due to free exciton annihilation in 3C-SiC pn structure on the base of high-quality epitaxial 3C-SiC layer with low densities of DPBs [2] (curve 4 at Fig.2, right); c) the spectral position of the green peak (with maximum at 2.35-2.5 eV) in the case of positive voltage polarity (plus at the Ni contact) is close to that of the so-called "defect" injection EL in 6H-SiC pn structures (curve 5 at Fig.2, right) but its origin is unclear; d) the peaks at hν of about 2.72 eV and 2.9 eV in the case of positive voltage polarity (plus at the Ni contact) are well-known EL peaks of 6H-SiC, which are due to the conduction band - Al level transition and free

It is seen that the trend of variations in the ultimate tensile strength (UTS) and percentage elongation (EL) of the composites with Pr content was similar, i. e. the UTS and EL of the composites increased firstly with an increase in Pr content and then decreased.
However, excess Pr (1.3%) decreases UTS and EL to 245 MPa and 1.22%, respectively.
Above studies have revealed that the variation tendency of the UTS and EL with Pr content Fig. 3.
In the present study, the addition of Pr increases UTS and EL until the amount of Pr reaches 1.0%.
After modification with 0.7 % Pr, the ultimate tensile strength (UTS) increased about 36.5% from 191 to 262 MPa and percentage elongation (EL) increased about 161.6% from 0.73 to 1.90%.

The Al acceptor concentration and thickness of the p+-SiC homoepitaxial layer were 10 19 cm-3 and 10 µm, respectively.
Ti/Al and Ni contacts were used for n+-GaN and p+-SiC, respectively.
The EL spectrum is shown in Fig. 3 (a).
The observed EL peaks are attributed to band-edge emission (2.9eV) and free electron-to-Al acceptor recombination (2.5eV) of 6H-SiC.
To simplify device processing, Ti/Al contacts were used for both the n +-GaN emitter and p +-SiC base layers.

Glass ITO α－NPD Alq bis-diphenylquinoxaline LiF/Al Fig. 1.
Structure of EL device and molecular structure of organic materials used In order to evaluate the performance of this compound as electron-transporting material, organic EL devices having a structure of ITO / NPD(50nm) / Alq (30nm) / bis-diphenylquinoxaline (30nm) / LiF(0.5nm) / Al(100nm)(Fig. 1) were fabricated.
Bulovic, et al.
[4] Li Tingxi, Fu Long, Yu Wenwen, et al.
[8] Li Tingxi, Gao Susu, Sui Peng, et al.

The ultimate tensile strength (UTS) and the elongation to fracture (EL) determined from these curves are indicated in Figure 2b, in comparison with those for conventional Al-5083 (O temper) [9] and an ultrafine-grained Al-5083 without reinforcing particles [10].
(b) The ultimate tensile strength (UTS, solid lines with solid circles) and the elongation to fracture (EL, dashed lines with solid circles) determined from the stress-strain curves in (a), in comparison with the UTS (solid lines with open circles) and EL (dashed lines with open circles) for conventional (O temper) Al-5083 [9] and the compressive flow stress for an ultrafine-grained Al-5083 without reinforcing particles (solid line with open triangles) [10].
At 473 K, the nanostructured Al-5083/SiCp composite reached a maximum in EL.
The EL minimum at an elevated temperature due to GBS has also been reported for a titanium alloy [18].
The decrease in EL at 473 to 673 K is due to the activation of grain boundary sliding in the ultrafine-grained Al-5083 matrix.

And to take the barrier Al2O3 and the remaining Al as the insulating layer and conducting layer, respectively, and to fill the phosphor in nano-pores as emitting layer would be another promising application of AAO in EL [4].
Prospect The promising application of the AAO membrane in FED and EL.
In this paper, an assumption about the application of the membrane in FED and EL was proposed.
And the application of the special AAO structure in FED and EL would be promising and available.
Fig. 3 emission spectra of (a) bulk ZnO (b) ZnO in AAO heated at 500°C (c) sample (b) annealed in reduce atmosphere at 300°C PLASTIC SUBSTRATE Remained Al Barrier layer Al2O3 Phosphor embedded ITO sputtered ITO ELECTRODE PHOSPHOR INSULATOR AL ELECTRODE Electrons emitting tip Conductive cathode insulator insulator ITO phosphor Remained Al ITO sputtered Nano-pore Phosphor embedded Fig.4 prospect of the application in FED and EL (a) field tip-emitter arrays of FED (b) sandwish structure of EL (a) (b) Acknowledgments The authors are very grateful for Ruilong Zong of the valuable advice and technical help.

Monodispersed CdSe nanoparticles were prepared by chemical method described by Zhang et al.[40].
Sharma et al. [32] have also reported the effect of ratios of Cd:Se in CdSe nanoparticles.
Rincon et al have also reported the hexagonal wurtzite structure for ZnS films with some low intensity peaks of ZnO (zincite) [38].
Similar results are reported by Kumbhojkar et al. [38] on mercaptoethanol capped ZnS nanoparticles.
Norris, A.L.

The hydrochar derived from CF and EL was designated as CF-250 and EL-250, respectively.
Subsequently, the metal concentrations (K, Na, Ca, Fe, Si, Al, Ti and Mg) in the solution were quantified by inductively-coupled plasma optical emission spectrometer (ICP-OES Perkin Elmer 3000DV (USA)).
It was obvious that the metal contents of hydrochars were lower than raw biomass; the K, Na, Mg and Al content changed drastically and the reductions of the Ca, Fe, Si and Ti content were relatively small.
The Is values of CF-250 and EL-250 were 0.051 and 0.35, respectively, which were lower than their raw biomass (0.14 for CF and 0.51 for EL, respectively).
So a low tendency of slagging for CF, CF-250, EL and EL-250 were found.

The red organic light-emitting devices (OLED) A ITO/PEDOT: PSS/PBD: p1-30/AlQ3/LiF/Al and B ITO/PEDOT: PSS/PBD: p1-30/BCP/AlQ3/LiF/Al were fabricated.
Device A ITO/PEDOT: PSS/PBD: p1-30/AlQ3/LiF/Al and Device B ITO/PEDOT: PSS/PBD: p1-30/BCP/AlQ3/LiF/Al were fabricated.
EL spectra and CIE coordinates were recorded by using SpectroScan PR 655 photometer (Photo Research).
EL spectra, CIE coordinates, current density and luminance curves were seen in Fig. 6 (a, b, c, d).
The red Device A ITO/PEDOT: PSS/PBD: p1-30/AlQ3/LiF/Al and Device B ITO/PEDOT: PSS/PBD: p1-30/BCP/ AlQ3/LiF/Al were fabricated.

The EL spectrum peak is at 430 nm, indicating that the carrier recombination is confined in the NPB layer, in additional light emission originates from NPB.
It suggested that the CuPc and BCP exactly function as hole-consuming and hole-blocking layers, respectively, which enhance the efficiency of carrier ，s recombination and confine the excitation in the EL layer.
Introduction Remarkable progress has been made since the initial discovery of organic light electroluminescence devices (OLEDs) by Tang et al [1], in 1987.
Finally a LiF buffer layer and Al cathode were deposited at a background pressure of 10 -6 Torr onto the organic films.
This is indeed the case as a blue EL emission characteristic of the emissive NPB layer is produced by the OLED of this particular layer structure.