Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors

Jun Suda; Yuki Nakano; Syouta Shimada; Koichi Amari; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.527-529.1545

Paper Titles

Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy
p.1529

Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements
p.1533

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
p.1537

Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes
p.1541

Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
p.1545

Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)
p.1549

GaN Resistive Gas Sensors for Hydrogen Detection
p.1553

Atomic Layer Epitaxy of (Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC
p.1559

Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
p.1563

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Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors

Abstract:

Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors (HBTs) using these heterojunctions is presented. The electroluminescence spectrum from n+-GaN/p+-SiC heterojunction diodes under forward bias clearly indicates electron injection from n+-GaN into p+-SiC. HBTs consisting of n+-GaN emitter /p+-SiC base/n−-SiC collector/n+-SiC substrate have been fabricated. Although clear common-base properties were obtained, the current gain was very low (10-4). SiC homojunction bipolar junction transistors (BJT) using the same base-collector junction exhibited a current gain value of 0.5, suggesting the low current gain of GaN/SiC HBTs originates from low emitter efficiency.