Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)

Sang Kwon Lee; Han Kyu Seong; Ki Chul Choi; Nam Kyu Cho; Heon Jin Choi; Eun Kyung Suh; Kee Suk Nahm

doi:10.4028/www.scientific.net/MSF.527-529.1549

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Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes
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Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
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Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)
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GaN Resistive Gas Sensors for Hydrogen Detection
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Atomic Layer Epitaxy of (Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC
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Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
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Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Direct Electrical Characteristics of GaN Nanowire...

Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)

Abstract:

We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8×8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm2/V⋅s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.