Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)
We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8×8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm2/V⋅s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
S. K. Lee et al., "Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)", Materials Science Forum, Vols. 527-529, pp. 1549-1552, 2006