Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Daisuke Nakamura

Abstract: Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also...

Authors: H. J. Rost, M. Schmidbauer, D. Siche

Abstract: The defect distribution in 4H-SiC single crystals in dependence on the seed polarity and its off-orientation was investigated by...

Authors: Roman Drachev, E. Deyneka, C. Rhodes, J. Schupp, Tangali S. Sudarshan

Abstract: The ability to set and accurately control the desired growth conditions is crucial in order to attain high quality bulk growth of Silicon...

Authors: A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh

Abstract: A novel approach to the high growth rate Chemical Vapor Deposition of SiC is described. The Halide Chemical Vapor Deposition (HCVD) method...

Authors: Saurav Nigam, Hun Jae Chung, Sung Wook Huh, J.R. Grim, A.Y. Polyakov, Mark A. Fanton, B.E. Weiland, David Snyder, Marek Skowronski

Abstract: Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor...

Authors: Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr.

Abstract: To devise a means of circumventing the cost of thick SiC epitaxy to generate drift layers in PiN diodes for >10kV operation, we have...

Authors: Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi

Abstract: Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a...


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