Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Peter J. Wellmann, Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, Ulrike Künecke

Abstract: The long term performance of today’s SiC based bipolar power devices suffer strongly from stacking fault formation caused by slip of basal...

Authors: Kap Ryeol Ku, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, Byoung Chul Shin

Abstract: SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with...

Authors: Krzysztof Grasza, Emil Tymicki, Jaroslaw Kisielewski

Abstract: Silicon carbide crystals were grown from the vapor. Improvement of the quality of the central part of the crystal was achieved by...

Authors: Jae Woo Kim, Soo Hyung Seo, Kwan Mo Kim, Joon Suk Song, Tae Sung Kim, Myung Hwan Oh

Abstract: We examined the influence of thermal treatment of high-purity SiC powder on 6H-SiC crystal growth. The doping concentration was decreased...

Authors: Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xu, Min Hua Jiang

Abstract: 6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth...

Authors: Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar

Abstract: Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal <0001> seed, DPB-free 3C-SiC single crystals...

Authors: Mark A. Fanton, Qiang Li, A.Y. Polyakov, R.L. Cavalero, R.G Ray, B.E. Weiland, Marek Skowronski

Abstract: The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using...

Authors: Yasuo Kito, Emi Makino, Kei Ikeda, Masao Nagakubo, Shoichi Onda

Abstract: High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A...

Authors: Didier Chaussende, Michel Pons, Roland Madar

Abstract: The growth of SiC crystals or epilayers from the liquid phase has already been reported for many years. Even if the resulting material can...

Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima

Abstract: We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions...


Showing 21 to 30 of 379 Paper Titles