Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth

Abstract:

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Silicon carbide crystals were grown from the vapor. Improvement of the quality of the central part of the crystal was achieved by optimization of the geometry of the source material. Active thermal interaction of the source material and the crystallization front made possible an effective programming of the shape and morphology of the crystal. Termination of micropipes on microfacets formed on the crystallization front during growth was observed.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

87-90

DOI:

10.4028/www.scientific.net/MSF.527-529.87

Citation:

K. Grasza et al., "Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth", Materials Science Forum, Vols. 527-529, pp. 87-90, 2006

Online since:

October 2006

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Price:

$35.00

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