Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
p.71
p.71
Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth
p.75
p.75
Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
p.79
p.79
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
p.83
p.83
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
p.87
p.87
The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method
p.91
p.91
Polytype Control in 6H-SiC Grown via Sublimation Method
p.95
p.95
Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
p.99
p.99
Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
p.103
p.103
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
Abstract:
Silicon carbide crystals were grown from the vapor. Improvement of the quality of the central part of the crystal was achieved by optimization of the geometry of the source material. Active thermal interaction of the source material and the crystallization front made possible an effective programming of the shape and morphology of the crystal. Termination of micropipes on microfacets formed on the crystallization front during growth was observed.
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Periodical:
Materials Science Forum (Volumes 527-529)
Pages:
87-90
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Online since:
October 2006
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© 2006 Trans Tech Publications Ltd. All Rights Reserved
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