Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Huang De Lin, Jeffery L. Wyatt, Yaroslav Koshka

Abstract: In this work, the mechanism of the epitaxial growth of 4H SiC using CH3Cl as the carbon source gas was investigated. The experiments were...

Authors: Mike F. MacMillan, Mark J. Loboda, Gil Chung, E.P. Carlson, Jian Wei Wan

Abstract: Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and...

Authors: Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via

Abstract: 4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon...

Authors: Jawad ul Hassan, Christer Hallin, Peder Bergman, Erik Janzén

Abstract: Thick epitaxial layers of 4H-SiC both n- and p-type were grown using horizontal Hot- Wall CVD (HWCVD). No large difference in the carrier...

Authors: Rachael L. Myers-Ward, Y. Shishkin, Olof Kordina, I. Haselbarth, Stephen E. Saddow

Abstract: A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of...

Authors: Guo Sheng Sun, Jin Ning, Quan Cheng Gong, Xin Gao, Lei Wang, Xing Fang Liu, Yi Ping Zeng, Jin Min Li

Abstract: Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth...

Authors: Jie Zhang, Janice Mazzola, Carl Hoff, C. Rivas, Esteban Romano, Janna R. B. Casady, Michael S. Mazzola, Jeff B. Casady, Kevin Matocha

Abstract: This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of...

Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Abstract: The influence of the epitaxial layer growth parameters on the electrical characteristics of Schottky diodes has been studied in detail....

Authors: Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Abstract: The epitaxial growth of SiC by a hot-wall CVD system using monomethylsilane (CH3SiH3) as a precursor is described. In the case of CH3SiH3...

Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim

Abstract: The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the...


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