Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Mike F. MacMillan; Mark J. Loboda; Gil Yong Chung; E.P. Carlson; Jian Wei Wan

doi:10.4028/www.scientific.net/MSF.527-529.175

Paper Titles

SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
p.159

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
p.163

Lower-Temperature Epitaxial Growth of 4H-SiC Using CH₃Cl Carbon Gas Precursor
p.167

Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH₃Cl Carbon Precursor
p.171

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
p.175

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
p.179

Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
p.183

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
p.187

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
p.191

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Homoepitaxial Growth of 4H-SiC Using a...

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Abstract:

Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and batch CVD systems. Variations of the chlorosilane flow under fixed conditions of gas composition, temperature and pressure resulted in growth rates between 4 to 20 μm/hr. Fixing the chlorosilane flow rate to achieve a growth rate of approximately 4 μm/hr, the effects of temperature, pressure and gas composition on background dopant incorporation, epitaxial layer uniformity and epitaxial defect generation were investigated. Intentional n and p-type doping has been demonstrated over the carrier range 1×1018-1×1020/cm3. This paper presents the first reported of use of chlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers.