Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

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Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and batch CVD systems. Variations of the chlorosilane flow under fixed conditions of gas composition, temperature and pressure resulted in growth rates between 4 to 20 μm/hr. Fixing the chlorosilane flow rate to achieve a growth rate of approximately 4 μm/hr, the effects of temperature, pressure and gas composition on background dopant incorporation, epitaxial layer uniformity and epitaxial defect generation were investigated. Intentional n and p-type doping has been demonstrated over the carrier range 1×1018-1×1020/cm3. This paper presents the first reported of use of chlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

175-178

DOI:

10.4028/www.scientific.net/MSF.527-529.175

Citation:

M. F. MacMillan et al., "Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor", Materials Science Forum, Vols. 527-529, pp. 175-178, 2006

Online since:

October 2006

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Price:

$35.00

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