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4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
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SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
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SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers

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Abstract:

Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1x1014 cm-3 and intentional p- and n-type doping from ~1x1015 cm-3 to >1x1019 cm-3. Intrawafer layer thickness and n-type doping uniformity (σ/mean) of ~2% and ~8% have been achieved to date in the 8x100-mm configuration. The total range of the average intrawafer thickness and doping within a run are approximately ±1% and ±6% respectively.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

159-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.159

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Online since:

October 2006

Authors:

Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, R.T. Leonard, D.A. McClure

Keywords:

100-mm Wafers, Epitaxy, Planetary, Warm-Wall

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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[10] Susceptor Area, cm2 616 616 940 1385 1521 na na na Total Useful Wafer Area, cm2 * 34 92 241 382 509 172 78 103 Growth Rate, µm/hr 3 3 4. 9 5 10 6 17. 8 13 cm2 of 10 µm thick epi/day^ 141 377 1273 2036 3490 991 615 758 Normalized Area Throughput 1 3 9 14 25 7 4 5 Thick Uniformity, %σ/mean 2. 4 3 1 3 2 2 0. 5 1. 6 Doping Uniformity, %σ/mean 3. 6 7 5 9 8 9 2 4. 8 *-assuming a 5 mm edge exclusion ^-assuming a 90 minute unload/load/purge/heat and 90 minute cool-down/purge per growth cycle.

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