SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers

Abstract:

Article Preview

Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1x1014 cm-3 and intentional p- and n-type doping from ~1x1015 cm-3 to >1x1019 cm-3. Intrawafer layer thickness and n-type doping uniformity (σ/mean) of ~2% and ~8% have been achieved to date in the 8x100-mm configuration. The total range of the average intrawafer thickness and doping within a run are approximately ±1% and ±6% respectively.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

159-162

DOI:

10.4028/www.scientific.net/MSF.527-529.159

Citation:

A. A. Burk et al., "SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers", Materials Science Forum, Vols. 527-529, pp. 159-162, 2006

Online since:

October 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.