Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa

Abstract: A new technique that reduces stacking fault (SF) density in 3C-SiC, termed switch-back epitaxy (SBE), is demonstrated regarding its effects...

Authors: Jörg Pezoldt, Francisco M. Morales, Thomas Stauden, Christian Förster, Efstathios K. Polychroniadis, J. Stoemenos, D. Panknin, Wolfgang Skorupa

Abstract: Flash lamp annealing of multilayer stack of the type SiC/Silicon overlayer(SOL)/SiC reduces the defect densities in the 3C-SiC/Si...

Authors: Hideki Shimizu, Yosuke Aoyama

Abstract: 3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane...

Authors: Aparna Gupta, Chacko Jacob

Abstract: Selective epitaxial growth (SEG) of cubic silicon carbide (3C-SiC) was carried out on patterned Si (100) substrates using SiO2 as a mask....

Authors: M. Reyes, M. Waits, S. Harvey, Y. Shishkin, Bruce Geil, J.T. Wolan, Stephen E. Saddow

Abstract: A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The...

Authors: Xiao An Fu, Jacob Trevino, Mehran Mehregany, Christian A. Zorman

Abstract: This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped...

Authors: Alexander A. Schmidt, Yuri V. Trushin, K.L. Safonov, V.S. Kharlamov, Dmitri V. Kulikov, Oliver Ambacher, Jörg Pezoldt

Abstract: The main obstacle for the implementation of numerical simulation for the prediction of the epitaxial growth is the variety of physical...

Authors: T.A.G. Eberlein, R. Jones, A.T. Blumenau

Abstract: Under forward bias bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal...

Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin

Abstract: Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional...

Authors: Shinichi Nakashima, Takeshi Mitani

Abstract: Raman spectroscopy using deep UV (DUV) light excitation has been applied to characterizing process-induced defects in surface layers in...


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