Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Takeshi Mitani, Shinichi Nakashima

Abstract: Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially...

Authors: Takeshi Mitani, Shinichi Nakashima, Hajime Okumura, Hiroyuki Nagasawa

Abstract: Visible and deep UV Raman measurements have been applied to investigate the structural and electrical properties of stacking disordered...

Authors: Orest J. Glembocki, Marek Skowronski, S.M. Prokes, D. Kurt Gaskill, Joshua D. Caldwell

Abstract: Bulk n+-4H-SiC wafers (n=1-2×1019 cm-3) containing annealing-induced stacking faults were examined by Raman scattering. The coupled...

Authors: M.S. Miao, Walter R.L. Lambrecht

Abstract: The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed....

Authors: Peter Deák, Adam Buruzs, Adam Gali, Thomas Frauenheim, Wolfgang J. Choyke

Abstract: Optoelectronic devices with 1D modulation of the potential through hetero-structure or doping superlattices have so far been the privilege...

Authors: G. Savini, M.I. Heggie, Sven Öberg

Abstract: First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We show that the stability of the dislocation...

Authors: Y. Wang, L. Chen, M.K. Mikhov, G. Samson, B.J. Skromme

Abstract: Formation of I1 Shockley stacking faults by recombination-enhanced defect glide in 4HSiC p-i-n diodes subject to high forward current...

Authors: S.I. Maximenko, P. Pirouz, Tangali S. Sudarshan

Abstract: In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been...

Authors: Ze Hong Zhang, A.E. Grekov, Priyamvada Sadagopan, S.I. Maximenko, Tangali S. Sudarshan

Abstract: The nucleation sites of stacking faults (SFs) during forward current stress operation of 4H-SiC PiN diodes were investigated by the...

Authors: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tomonori Nakamura, R. Ishii, Koji Nakayama, Yoshitaka Sugawara

Abstract: We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing....


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