Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Aurelie Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, W.M. Chen, Erik Janzén, Michel Mermoux, Edwige Bano

Abstract: A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been...

Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov, John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan, Nicolas G. Wright

Abstract: We observe new photoluminescence centers in electron-irradiated 6H-SiC with phonon replicas up to 250 meV and clear threefold isotope...

Authors: K. Neimontas, Arunas Kadys, R. Aleksiejūnas, Kęstutis Jarašiūnas, Gil Chung, Edward K. Sanchez, Mark J. Loboda

Abstract: We applied a non-degenerate four wave mixing (FWM) technique to investigate carrier generation, diffusion and recombination processes in...

Authors: John W. Steeds, S.A. Furkert, W. Sullivan, Günter Wagner

Abstract: The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature...

Authors: W. Sullivan, John W. Steeds, Hans Jürgen von Bardeleben, J.L. Cantin

Abstract: Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1]...

Authors: W. Sullivan, John W. Steeds

Abstract: Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The...

Authors: Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, Bengt Gunnar Svensson, John W. Steeds, W. Sullivan

Abstract: The migration of carbon interstitials in n-type 4H-SiC has been revealed with optical and electrical measurements. Furthermore, clear...

Authors: L. Storasta, Isaho Kamata, Tomonori Nakamura, Hidekazu Tsuchida

Abstract: We have investigated the electrically active deep level defects in p- and n-type 4H-SiC after low energy electron irradiation. Intrinsic...

Authors: Sung Wook Huh, Joseph J. Sumakeris, A.Y. Polyakov, Marek Skowronski, Paul B. Klein, B.V. Shanabrook, Michael J. O'Loughlin

Abstract: Carrier lifetimes and the dominant electron and hole traps were investigated in a set of thick (9-104mm) undoped 4H-SiC epitaxial layers...

Authors: Sung Wook Huh, A.Y. Polyakov, Hun Jae Chung, Saurav Nigam, Marek Skowronski, E.R. Glaser, W.E. Carlos, Mark A. Fanton, N.B. Smirnov

Abstract: Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition...


Showing 111 to 120 of 379 Paper Titles