Investigation of the Displacement Threshold of Si in 4H SiC

W. Sullivan; John W. Steeds

doi:10.4028/www.scientific.net/MSF.527-529.481

Paper Titles

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
p.465

Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
p.469

Origin of the Up-Conversion Process in 4H SiC
p.473

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
p.477

Investigation of the Displacement Threshold of Si in 4H SiC
p.481

Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
p.485

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
p.489

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
p.493

Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
p.497

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Investigation of the Displacement Threshold of Si...

Investigation of the Displacement Threshold of Si in 4H SiC

Abstract:

Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence of the silicon vacancy-related V1 ZPL doublet (~860nm) on electron energy and electron dose has been investigated by low temperature photoluminescence spectroscopy. Furthermore, this luminescence centre has been studied across a broad range of samples of various doping levels. Some annealing characteristics of this centre are reported.

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Materials Science Forum (Volumes 527-529)

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481-484

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https://doi.org/10.4028/www.scientific.net/MSF.527-529.481

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October 2006

Authors:

W. Sullivan, John W. Steeds

Keywords:

Displacement Threshold, Neutral Silicon Vacancy, Photoluminescence Microscopy

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