Investigation of the Displacement Threshold of Si in 4H SiC

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Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence of the silicon vacancy-related V1 ZPL doublet (~860nm) on electron energy and electron dose has been investigated by low temperature photoluminescence spectroscopy. Furthermore, this luminescence centre has been studied across a broad range of samples of various doping levels. Some annealing characteristics of this centre are reported.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

481-484

Citation:

W. Sullivan and J. W. Steeds, "Investigation of the Displacement Threshold of Si in 4H SiC", Materials Science Forum, Vols. 527-529, pp. 481-484, 2006

Online since:

October 2006

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