Investigation of the Displacement Threshold of Si in 4H SiC
Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence of the silicon vacancy-related V1 ZPL doublet (~860nm) on electron energy and electron dose has been investigated by low temperature photoluminescence spectroscopy. Furthermore, this luminescence centre has been studied across a broad range of samples of various doping levels. Some annealing characteristics of this centre are reported.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
W. Sullivan and J. W. Steeds, "Investigation of the Displacement Threshold of Si in 4H SiC", Materials Science Forum, Vols. 527-529, pp. 481-484, 2006