High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight

Alexander Mattausch; M. Bockstedte; Oleg Pankratov; John W. Steeds; S.A. Furkert; J.M. Hayes; W. Sullivan; Nicolas G. Wright

doi:10.4028/www.scientific.net/MSF.527-529.465

Paper Titles

A New Method of Mapping and Counting Micropipes in SiC Wafers
p.447

Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry
p.451

Optical Studies of Deep Centers in Semi-Insulating SiC
p.455

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
p.461

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
p.465

Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
p.469

Origin of the Up-Conversion Process in 4H SiC
p.473

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
p.477

Investigation of the Displacement Threshold of Si in 4H SiC
p.481

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High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight

Abstract:

We observe new photoluminescence centers in electron-irradiated 6H-SiC with phonon replicas up to 250 meV and clear threefold isotope splitting of the highest energy mode. Based on ab initio calculations, we discuss the tri-carbon anti-site (C3)Si and the di-interstitial (C2)Hex as models for these centers.