A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC

Abstract:

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Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

477-480

DOI:

10.4028/www.scientific.net/MSF.527-529.477

Citation:

W. Sullivan et al., "A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC", Materials Science Forum, Vols. 527-529, pp. 477-480, 2006

Online since:

October 2006

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Price:

$35.00

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