A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the  or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
W. Sullivan et al., "A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC", Materials Science Forum, Vols. 527-529, pp. 477-480, 2006