A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC

W. Sullivan; John W. Steeds; Hans Jürgen von Bardeleben; J.L. Cantin

doi:10.4028/www.scientific.net/MSF.527-529.477

Paper Titles

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
p.461

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
p.465

Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
p.469

Origin of the Up-Conversion Process in 4H SiC
p.473

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
p.477

Investigation of the Displacement Threshold of Si in 4H SiC
p.481

Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
p.485

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
p.489

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
p.493

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529A Combined Photoluminescence and Electron...

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC

Abstract:

Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.