Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
A. Thuaire et al., "Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques", Materials Science Forum, Vols. 527-529, pp. 461-464, 2006