Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

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A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

461-464

Citation:

A. Thuaire et al., "Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques", Materials Science Forum, Vols. 527-529, pp. 461-464, 2006

Online since:

October 2006

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$38.00

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