Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

Aurelie Thuaire; Anne Henry; Björn Magnusson; Peder Bergman; W.M. Chen; Erik Janzén; Michel Mermoux; Edwige Bano

doi:10.4028/www.scientific.net/MSF.527-529.461

Paper Titles

Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
p.443

A New Method of Mapping and Counting Micropipes in SiC Wafers
p.447

Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry
p.451

Optical Studies of Deep Centers in Semi-Insulating SiC
p.455

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
p.461

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
p.465

Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
p.469

Origin of the Up-Conversion Process in 4H SiC
p.473

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
p.477

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Investigation of the Electronic Structure of the...

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

Abstract:

A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.