Origin of the Up-Conversion Process in 4H SiC
The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature photoluminescence microscopy using 488nm and 325nm laser excitation. The experiments were performed on as-irradiated samples and also after annealing isochronally to various temperatures up to 1300°C.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
J. W. Steeds et al., "Origin of the Up-Conversion Process in 4H SiC", Materials Science Forum, Vols. 527-529, pp. 473-476, 2006