Origin of the Up-Conversion Process in 4H SiC

Abstract:

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The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature photoluminescence microscopy using 488nm and 325nm laser excitation. The experiments were performed on as-irradiated samples and also after annealing isochronally to various temperatures up to 1300°C.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

473-476

DOI:

10.4028/www.scientific.net/MSF.527-529.473

Citation:

J. W. Steeds et al., "Origin of the Up-Conversion Process in 4H SiC", Materials Science Forum, Vols. 527-529, pp. 473-476, 2006

Online since:

October 2006

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Price:

$35.00

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