Origin of the Up-Conversion Process in 4H SiC

John W. Steeds; S.A. Furkert; W. Sullivan; Günter Wagner

doi:10.4028/www.scientific.net/MSF.527-529.473

Paper Titles

Optical Studies of Deep Centers in Semi-Insulating SiC
p.455

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
p.461

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
p.465

Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
p.469

Origin of the Up-Conversion Process in 4H SiC
p.473

A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
p.477

Investigation of the Displacement Threshold of Si in 4H SiC
p.481

Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
p.485

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
p.489

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Origin of the Up-Conversion Process in 4H SiC

Origin of the Up-Conversion Process in 4H SiC

Abstract:

The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature photoluminescence microscopy using 488nm and 325nm laser excitation. The experiments were performed on as-irradiated samples and also after annealing isochronally to various temperatures up to 1300°C.