Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy

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The migration of carbon interstitials in n-type 4H-SiC has been revealed with optical and electrical measurements. Furthermore, clear evidence is found that carbon interstitials are involved in the formation of the Z- and S-centers detected by DLTS within the electronic band gap of n-type 4H-SiC.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

485-488

Citation:

G. Alfieri et al., "Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 527-529, pp. 485-488, 2006

Online since:

October 2006

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$38.00

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