Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
The migration of carbon interstitials in n-type 4H-SiC has been revealed with optical and electrical measurements. Furthermore, clear evidence is found that carbon interstitials are involved in the formation of the Z- and S-centers detected by DLTS within the electronic band gap of n-type 4H-SiC.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
G. Alfieri et al., "Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 527-529, pp. 485-488, 2006