Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy

Abstract:

The migration of carbon interstitials in n-type 4H-SiC has been revealed with optical and electrical measurements. Furthermore, clear evidence is found that carbon interstitials are involved in the formation of the Z- and S-centers detected by DLTS within the electronic band gap of n-type 4H-SiC.

• Periodical: Materials Science Forum (Volumes 527-529)
• Pages: 485-488
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.485
• Online since: October 2006
• Authors: Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, Bengt Gunnar Svensson, John W. Steeds, W. Sullivan
• Keywords: Carbon, DLTS, Intrinsic Defect, Migration, Photoluminescence (PL)

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