Silicon Carbide and Related Materials 2005
Paper Title Page
Abstract: We present new electron-paramagnetic-resonance (EPR) data on the HEI4/SI5 center in 4H-SiC. So far, the SI5 (SI-5) center has been observed...
Abstract: Two types of a new triplet centers labeled as N-V have been observed in heavily neutron irradiated (dose of 1021 cm-2) and high-temperature...
Abstract: The decay kinetics of a persistent photoconductivity (PPC) in undoped semi-insulating 4H SiC and intercenter charge transfer were studied...
Abstract: In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects...
Abstract: In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of...
Abstract: Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC)...
Abstract: We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7K <...