Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC

T. Umeda; Nguyen Tien Son; Junichi Isoya; Norio Morishita; Takeshi Ohshima; Hisayoshi Itoh; Erik Janzén

doi:10.4028/www.scientific.net/MSF.527-529.543

Paper Titles

Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
p.527

Thermal Evolution of Defects in Semi-Insulating 4H SiC
p.531

Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
p.535

Signature of the Negative Carbon Vacancy-Antisite Complex
p.539

Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
p.543

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
p.555

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Electron Paramagnetic Resonance Study of the...

Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC

Abstract:

We present new electron-paramagnetic-resonance (EPR) data on the HEI4/SI5 center in 4H-SiC. So far, the SI5 (SI-5) center has been observed only in as-grown SiC substrates; however, we found that it can be created by electron irradiation to commercial n-type 4H-SiC. The artificially created SI5 center, which we had preliminary called HEI4, was found to be identical with the SI5 center in as-grown SiC. A high-intensity HEI4/SI5 spectrum of irradiated SiC revealed clear hyperfine structures of 29Si and 13C, which enabled us to identify the origin of this center as a carbon antisite-vacancy pair in the negative charge state (CSi-VC –). We assessed its electronic levels using photo-EPR.