Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC

Ekaterina N. Kalabukhova; S.N. Lukin; D.V. Savchenko; W.C. Mitchel; Siegmund Greulich-Weber; E. Rauls; Uwe Gerstmann

doi:10.4028/www.scientific.net/MSF.527-529.559

Paper Titles

Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
p.543

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
p.555

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
p.563

Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

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Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC

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Silicon Carbide and Related Materials 2005

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Materials Science Forum (Volumes 527-529)

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559-562

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.559

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Online since:

October 2006

Authors:

Ekaterina N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, Siegmund Greulich-Weber, E. Rauls, Uwe Gerstmann

Keywords:

Carbon Vacancy, EPR, Hydrogen, Intrinsic Defect, Semi Insulating SiC

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