Identification of Deep Level Defects in SiC Bipolar Junction Transistors

Patrick M. Lenahan; N.T. Pfeiffenberger; T.G. Pribicko; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.527-529.567

Paper Titles

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
p.555

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
p.563

Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

Electronic Raman Studies of Shallow Donors in Silicon Carbide
p.579

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Identification of Deep Level Defects in SiC...

Identification of Deep Level Defects in SiC Bipolar Junction Transistors

Abstract:

In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

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Materials Science Forum (Volumes 527-529)

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567-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.567

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Online since:

October 2006

Authors:

Patrick M. Lenahan, N.T. Pfeiffenberger, T.G. Pribicko, Aivars J. Lelis

Keywords:

Bipolar Transistors, Deep Level Defect, Recombination Centers, Spin Dependent Recombination

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