Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Fei Yan; Robert P. Devaty; Wolfgang J. Choyke; Adam Gali; I. Bhat; David J. Larkin

doi:10.4028/www.scientific.net/MSF.527-529.585

Paper Titles

Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

Electronic Raman Studies of Shallow Donors in Silicon Carbide
p.579

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585

Photoluminescence of Phosphorous Doped SiC
p.589

Shallow P Donors in 3C-, 4H- and 6H-SiC
p.593

Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
p.597

Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
p.601

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Evidence for Phosphorus on Carbon and Silicon...

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC

Abstract:

New lines are observed in the photoluminescence of 6H and 4H SiC epitaxial layers grown in cold wall CVD reactors and doped with phosphorus. These lines are associated with neutral phosphorus donor four particle bound exciton complexes with the phosphorus substituting on both the carbon and silicon sublattices. Assignments are made for the (h) hexagonal and (k) cubic sites of the phosphorus donor substituting on the two SiC sublattices.

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Materials Science Forum (Volumes 527-529)

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585-588

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.585

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Online since:

October 2006

Authors:

Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Adam Gali, I. Bhat, David J. Larkin

Keywords:

Carbon Sites, Phosphorous, Photoluminescence (PL), Silicon Sites

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References

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