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Paper Titles
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585
Photoluminescence of Phosphorous Doped SiC
p.589
Shallow P Donors in 3C-, 4H- and 6H-SiC
p.593
Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
p.597
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
p.601
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
p.605
New Aspects in n-type Doping of SiC with Phosphorus
p.609
Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
p.613
Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
p.617

Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC

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Abstract:

The procedure of fitting the spectra associated with donor-acceptor pair luminescence arising from nitrogen-aluminum and phosphorus-aluminum pairs in 4H SiC is described in detail. We show that the fitting can be used not only for accurate evaluation of the ionization energies of the different donors and acceptors involved, but also for unambiguous determination of their lattice sites.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

601-604

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.601

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Online since:

October 2006

Authors:

Ivan G. Ivanov, Anne Henry, Erik Janzén

Keywords:

Aluminium Acceptor, Donor-Acceptor Pair, Nitrogen Donor, Phosphorous Donor

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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