Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration

Sunil Rao; T. Paul Chow; I. Bhat

doi:10.4028/www.scientific.net/MSF.527-529.597

Paper Titles

Electronic Raman Studies of Shallow Donors in Silicon Carbide
p.579

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585

Photoluminescence of Phosphorous Doped SiC
p.589

Shallow P Donors in 3C-, 4H- and 6H-SiC
p.593

Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
p.597

Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
p.601

A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
p.605

New Aspects in n-type Doping of SiC with Phosphorus
p.609

Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
p.613

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Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration

Abstract:

4H-SiC implanted with high dose of phosphorus has been shown to exhibit lower sheet resistance than 4H-SiC implanted with high dose of nitrogen. In this paper, we have implanted various doses (1x1014cm-2, 2x1014cm-2, 1x1015cm-2 and 4x1015cm-2) of phosphorus into 4H-SiC in order to extract the ionization energy of phosphorus in 4H-SiC as a function of the doping concentration. Variable temperature Hall effect measurements were performed in the temperature range from 60-600K. Least square fits using the charge neutrality equation with two donor levels were used to extract the ionization energies and donor concentrations from the measured data. The ionization energies for both, the hexagonal (53meV, 49meV and 26meV) and the cubic (109meV, 101meV and 74meV) site decreased as the donor concentration (5x1018cm-3, 9.8x1018cm-3 and 3.4x1019cm-3) increased.