Photoluminescence of Phosphorous Doped SiC

Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.527-529.589

Paper Titles

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

Electronic Raman Studies of Shallow Donors in Silicon Carbide
p.579

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585

Photoluminescence of Phosphorous Doped SiC
p.589

Shallow P Donors in 3C-, 4H- and 6H-SiC
p.593

Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
p.597

Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
p.601

A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
p.605

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Photoluminescence of Phosphorous Doped SiC

Photoluminescence of Phosphorous Doped SiC

Abstract:

We report the results of a photoluminescence (PL) study of n-type phosphorus-doped SiC epilayers. The PL spectra consist of a set of sharp lines that are interpreted as excitons bound to the P donor with zero-phonon lines which have photon energies very close to the nitrogen-bound excitons and followed by phonon assisted replicas.