Photoluminescence of Phosphorous Doped SiC

Abstract:

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We report the results of a photoluminescence (PL) study of n-type phosphorus-doped SiC epilayers. The PL spectra consist of a set of sharp lines that are interpreted as excitons bound to the P donor with zero-phonon lines which have photon energies very close to the nitrogen-bound excitons and followed by phonon assisted replicas.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

589-592

DOI:

10.4028/www.scientific.net/MSF.527-529.589

Citation:

A. Henry and E. Janzén, "Photoluminescence of Phosphorous Doped SiC", Materials Science Forum, Vols. 527-529, pp. 589-592, 2006

Online since:

October 2006

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$35.00

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