Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

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Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

575-578

DOI:

10.4028/www.scientific.net/MSF.527-529.575

Citation:

R. Aavikko et al., "Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy", Materials Science Forum, Vols. 527-529, pp. 575-578, 2006

Online since:

October 2006

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$35.00

[1] O. Kordina et. al.: Applied Physics Letters Vol. 69 (1996), p.1456.

[2] A. Ellison et. al.: Proc. of MRS fall meeting 2000 Vol. 640 (2001), p. H1. 2.

[3] K. Saarinen, P. Hautojärvi and C. Corbel, in: Identification of Defects in Semiconductors, edited by M. Stavola, Academic Press, N.Y. (1998).

[4] R. Krause-Rehberg and H. S. Leipner: Positron Annihilation in Semiconductors: Defect Studies Spinger series in Solid-State Sciences, Springer-Verlag, Berlin (1998).

DOI: 10.1007/978-3-662-03893-2_4

[5] R. Aavikko, K. Saarinen, B. Magnusson and E. Janzèn: Mater. Sci. Forum Vol. 483-485 (2005), p.469.

[6] R. Aavikko, K. Saarinen, B. Magnusson and E. Janzèn: submitted to Phys. Rev. B (2005).

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