Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

Reino Aavikko; Kimmo Saarinen; Björn Magnusson; Erik Janzén

doi:10.4028/www.scientific.net/MSF.527-529.575

Paper Titles

Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
p.563

Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

Electronic Raman Studies of Shallow Donors in Silicon Carbide
p.579

Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585

Photoluminescence of Phosphorous Doped SiC
p.589

Shallow P Donors in 3C-, 4H- and 6H-SiC
p.593

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Clustering of Vacancies in Semi-Insulating SiC...

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

Abstract:

Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2005

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

575-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.575

Citation:

Cite this paper

Online since:

October 2006

Authors:

Reino Aavikko, Kimmo Saarinen, Björn Magnusson, Erik Janzén

Keywords:

HTCVD, Positron, Vacancy Cluster

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] O. Kordina et. al.: Applied Physics Letters Vol. 69 (1996), p.1456.

Google Scholar

[2] A. Ellison et. al.: Proc. of MRS fall meeting 2000 Vol. 640 (2001), p. H1. 2.

Google Scholar

[3] K. Saarinen, P. Hautojärvi and C. Corbel, in: Identification of Defects in Semiconductors, edited by M. Stavola, Academic Press, N.Y. (1998).

Google Scholar

[4] R. Krause-Rehberg and H. S. Leipner: Positron Annihilation in Semiconductors: Defect Studies Spinger series in Solid-State Sciences, Springer-Verlag, Berlin (1998).

DOI: 10.1007/978-3-662-03893-2_8

Google Scholar

[5] R. Aavikko, K. Saarinen, B. Magnusson and E. Janzèn: Mater. Sci. Forum Vol. 483-485 (2005), p.469.

Google Scholar

[6] R. Aavikko, K. Saarinen, B. Magnusson and E. Janzèn: submitted to Phys. Rev. B (2005).

Google Scholar