Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance

X. Kerbiriou; Marie France Barthe; S. Esnouf; P. Desgardin; G. Blondiaux; G. Petite

doi:10.4028/www.scientific.net/MSF.527-529.571

Paper Titles

Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
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Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
p.559

Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
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Identification of Deep Level Defects in SiC Bipolar Junction Transistors
p.567

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
p.571

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
p.575

Electronic Raman Studies of Shallow Donors in Silicon Carbide
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Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
p.585

Photoluminescence of Phosphorous Doped SiC
p.589

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Vacancy Defects Induced by Low Energy Electron...

Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance

Abstract:

In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of vacancy defects produced by low energy electron irradiation. N-doped 3C-SiC and 6H-SiC monocrystals have been irradiated with electrons at different energies from 240keV to 900keV. EPR measurements show that Frenkel pairs VSi 3-/Si are created in 6H-SiC when electron irradiation is performed at low energy (240-360 keV). EPR also indicates that the silicon displacement threshold energy is higher in 3C-SiC than in 6HSiC. Moreover, PAS results show that the size and concentration of the vacancy defects decrease when the electron energy decreases for both polytypes. PAS detects vacancy defects in 240keV electron irradiated 3C-SiC, and the detection of the carbon vacancy is proposed.

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Materials Science Forum (Volumes 527-529)

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571-574

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.571

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October 2006

Authors:

X. Kerbiriou, Marie France Barthe, S. Esnouf, P. Desgardin, G. Blondiaux, G. Petite

Keywords:

Doppler Broadening, Electron Paramagnetic Resonance (EPR), Positron Annihilation, Positron Lifetime Spectroscopy, Vacancy Defects

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References

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