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Paper Titles
Divacancy and Its Identification: Theory
p.523
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
p.527
Thermal Evolution of Defects in Semi-Insulating 4H SiC
p.531
Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
p.535
Signature of the Negative Carbon Vacancy-Antisite Complex
p.539
Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
p.543
Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547
Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC
p.551
Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
p.555

Signature of the Negative Carbon Vacancy-Antisite Complex

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Abstract:

The negative carbon vacancy antisite complex is analysed by ab initio theory in view of the SI5 EPR-center. The complex occurs in a Jahn-Teller distorted ground state and a meta stable state. This and the calculated hyperfine structure agree nicely with the temperature dependent EPR spectra of SI5. An interpretation of the photo-EPR experiments is proposed.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

539-542

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.539

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Online since:

October 2006

Authors:

M. Bockstedte, Adam Gali, T. Umeda, Nguyen Tien Son, Junichi Isoya, Erik Janzén

Keywords:

Ab Initio Hyperfine Signature, Semi Insulating SiC, Vacancy Complexes

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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