Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC

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Electron paramagnetic resonance (EPR) studies of the P6/P7 centers in 4H- and 6H-SiC are reported. The obtained principal values of the hyperfine tensors of C and Si neighbors are in good agreement with the values of the neutral divacancy (VCVSi 0) calculated by ab initio supercell calculations. The results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCSi 2+), are related to the triplet ground states of the C3v/C1h configurations of VCVSi 0.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

527-530

Citation:

N. T. Son et al., "Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC", Materials Science Forum, Vols. 527-529, pp. 527-530, 2006

Online since:

October 2006

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$38.00

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