Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

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The nucleation sites of stacking faults (SFs) during forward current stress operation of 4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not exhibit SF formation under current stressing at 200A/cm2 for 3 hours.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

371-374

Citation:

Z. H. Zhang et al., "Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers", Materials Science Forum, Vols. 527-529, pp. 371-374, 2006

Online since:

October 2006

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$38.00

[1] S. Ha, M. Skowronski and H. Lendenmann: J. Appl. Phys. 99 (2004), p.393.

[2] S. I. Maximenko and T. S. Sudarshan: J. Appl. Phys. 97 (2005), p.074501.

[3] S. Ha, M. Benamara, M. Skowronski and H. Lendenmann: Appl. Phys. Lett. 83 (2003), p.4957.

[4] S. I. Maximenko, P. Pirouz and T. S. Sudarshan: Appl. Phys. Lett. 87 (2005), p.033503.

[5] M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin and H. Lendenmann: J. Appl. Phys. 92 (2002), p.4699.

[6] H. Jacobson, J. P. Bergman, C. Hallin, E. Janzén, T. Tuomi and H. Lendenmann: J. Appl. Phys. 95 (2004), p.1485.

[7] B. J. Skromme, K. Palle, C. D. Poweleit, L. R. Bryant, W. M. Vetter, M. Dudley, K. Moore and T. Gehoski: Mater. Sci. Forum 389-393 (2002), p.455.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.455

[8] J. J. Sumakeris, J. R. Jenny and A. R. Powell: MRS bulletin, 30(4) (2005), p.280.

[9] Z. Zhang and T. S. Sudarshan: Growth of low basal plane dislocation density SiC epitaxial layers, these Proceedings.

[10] M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker and S. Wang: Appl. Phys. Lett. 82 (2003), p.2410.

[11] S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley and M. K. Das: Phys. Rev. Lett. 92(17) (2004), p.175504.

[12] V. Tillay, F. Pailloux, M. F. Denanot, P. Pirouz, J. Rabier, J. L. Demenet and J. F. Barbot: Europ. Phys. J.: Appl. Phys. 2 (1998).