Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Ze Hong Zhang; A.E. Grekov; Priyamvada Sadagopan; S.I. Maximenko; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.527-529.371

Paper Titles

Silicon Carbide: A Playground for 1D-Modulation Electronics
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Peierls Barriers and Core Properties of Partial Dislocations in SiC
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Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
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Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
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Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
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Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
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Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction
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Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes
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Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Performance of Silicon Carbide PiN Diodes...

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Abstract:

The nucleation sites of stacking faults (SFs) during forward current stress operation of 4H-SiC PiN diodes were investigated by the electron beam induced current (EBIC) mode of scanning electron microscopy (SEM), and the primary SF nucleation sites were found to be basal plane dislocations (BPDs). Damage created on the diode surface also acts as SF nucleation sites. By using a novel BPD-free SiC epilayer, and avoiding surface damage, PiN diodes were fabricated which did not exhibit SF formation under current stressing at 200A/cm2 for 3 hours.

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Silicon Carbide and Related Materials 2005

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Materials Science Forum (Volumes 527-529)

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371-374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.371

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Online since:

October 2006

Authors:

Ze Hong Zhang, A.E. Grekov, Priyamvada Sadagopan, S.I. Maximenko, Tangali S. Sudarshan

Keywords:

Basal Plane Dislocation (BPD), Damage, Degradation, Nucleation Sites, PiN Diode

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