Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction

Maryse Lancin; G. Regula; Joël Douin; Hosni Idrissi; Laurent Ottaviani; Bernard Pichaud

doi:10.4028/www.scientific.net/MSF.527-529.379

Paper Titles

Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
p.363

Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
p.367

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
p.371

Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
p.375

Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction
p.379

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes
p.383

Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
p.387

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
p.391

Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
p.395

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Investigation of Mechanical Stress-Induced Double...

Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction

Abstract:

Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by annealing at 550°C or 700°C with or without an additional compressive stress. The defects are planar and always consist of double stacking faults dragged by a pair of partial dislocations. In a pair, the partial dislocations have the same line direction, Burgers vector and core composition. All the identified gliding dislocations have a silicon core. An analysis of their expansion during annealing proves that C(g) partial segments can be created but that C(g) partial dislocations are immobile.

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Materials Science Forum (Volumes 527-529)

Pages:

379-382

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.379

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Online since:

October 2006

Authors:

Maryse Lancin, G. Regula, Joël Douin, Hosni Idrissi, Laurent Ottaviani, Bernard Pichaud

Keywords:

4H-SiC, Dislocation Core Composition, Double Stacking Faults, High Resolution Transmission Electron Microscopy, WBTEM

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References

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