Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction

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Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by annealing at 550°C or 700°C with or without an additional compressive stress. The defects are planar and always consist of double stacking faults dragged by a pair of partial dislocations. In a pair, the partial dislocations have the same line direction, Burgers vector and core composition. All the identified gliding dislocations have a silicon core. An analysis of their expansion during annealing proves that C(g) partial segments can be created but that C(g) partial dislocations are immobile.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

379-382

Citation:

M. Lancin et al., "Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction", Materials Science Forum, Vols. 527-529, pp. 379-382, 2006

Online since:

October 2006

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$38.00

[1] H. Idrissi, M. Lancin, J. Douin, G. Regula, B. Pichaud, R. El Bouayadi, and J.M. Roussel : Mat. Res. Soc. Symp. Proc. 815 (2004), p. J72. 1.

[2] H. Idrissi, G. Regula, M. Lancin, J. Douin and B. Pichaud: Phys. Stat. Sol. (c) 6 (2005), p.1998-(2003).

[3] L. Ottaviani, H. Idrissi, P. Hidalgo, M. Lancin, B. Pichaud: Phys. Stat. Sol. (c) 6 (2005), pp.1792-96.

[4] A.V. Samant, M.H. Hong and P. Pirouz: Phys. Stat. Sol. (b) 222, (2000), p.75.

[5] P. Pirouz and J.W. Yang: Ultramicroscopy 51, (1993), p.189.

[6] P. Pirouz, J.L. Demenet and M.H. Hong: Phil. Mag A, 81, (2001), p.1207.

[7] J.Q. Liu, H.J. Chung, T.A. Kuhr, Q. Li and M. Skowronski: Appl. Phys. Lett. 80, 12, (2002), p.2111.

[8] T.A. Kuhr, J.Q. Liu, H.J. Chung, M. Skowronski and F. Szmulowicz: J. Appl. Phys. 92, (2002), p.5863.

[9] H.J. Chung, J.Q. Liu and M. Skowronski: Appl. Phys. Lett. 81 (2002), p.3759.

[10] G. Regula, M. Lancin, H. Idrissi, B. Pichaud and J. Douin: Phil Mag Lett. 85 (2005), pp.259-267.

[11] M. Lancin, C. Ragaru and C. Godon: Phil. Mag. B 81, (2001), p.1633.

[12] M.S. Miao, S. Limpijumnong and W.R.L. Lambrecht: Appl. Phys. Lett. 79, (2001), p.4360.

[13] H.P. Iwata, U. Lindefelt, S. Oberg and P.R. Briddon: J. Appl. Phys. 93, (2003), p.1577; ibid. J. Appl. Phys. 94, (2003) p.4972.

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