Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, K. Kimura, K. Nakamura, Sadafumi Yoshida

Abstract: We have proposed a novel model of hydrogen etching of SiC based on thermal equilibrium and have confirmed the validity of our model through...

Authors: Ho Keun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Hyeong Joon Kim

Abstract: In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC...

Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami

Abstract: 4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We...

Authors: Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto

Abstract: We have investigated the morphology and doping characteristics of 4H-SiC epilayers grown on 13o-22o off-axis (0001) substrates by...

Authors: Mikael Syväjärvi, Rositza Yakimova, Gholam Reza Yazdi, Arul Arjunan, Eugene Toupitsyn, Tangali S. Sudarshan

Abstract: Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180...

Authors: Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Koji Nakayama, R. Ishii, Yoshitaka Sugawara

Abstract: Propagation and nucleation of basal plane dislocations (BPDs) in 4H-SiC(000-1) and (0001) epitaxy were compared. Synchrotron reflection...

Authors: Hiroki Yamaguchi, Yukinori Sakiyama, Emi Makino, Shoichi Onda, Yoichiro Matsumoto

Abstract: The origin of the polytypes of SiC has been investigated from the viewpoint of surface reactions by the density functional theory (DFT)...

Authors: Christian Hecht, Bernd Thomas, Wolfgang Bartsch

Abstract: This work presents results on the growth of thick epitaxial layers on 4° off-oriented 4HSiC in a commercially available hot-wall CVD...

Authors: Ze Hong Zhang, Tangali S. Sudarshan

Abstract: A method was developed in our laboratory to grow low basal plane dislocation (BPD) density and BPD-free SiC epilayers. The key approach is...

Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry

Abstract: We report on further observations of homoepitaxially grown 4H silicon carbide (SiC) cantilevers on commercial on-axis mesa patterned...


Showing 51 to 60 of 379 Paper Titles