Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

Abstract:

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We have proposed a novel model of hydrogen etching of SiC based on thermal equilibrium and have confirmed the validity of our model through the analysis of H2 etching experiments. The experimental results obtained showed that the etching rate is expressed by a linear equation with the H2 flow rate, by an exponential function with the reciprocal of the temperature and by a power law with the pressure. These results agree well with the theoretical behaviors derived from our model.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

211-214

DOI:

10.4028/www.scientific.net/MSF.527-529.211

Citation:

Y. Ishida et al., "Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena", Materials Science Forum, Vols. 527-529, pp. 211-214, 2006

Online since:

October 2006

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Price:

$35.00

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