Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

Yuuki Ishida; Tetsuo Takahashi; Hajime Okumura; Kazuo Arai; K. Kimura; K. Nakamura; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.527-529.211

Paper Titles

Highly Uniform SiC Epitaxy for MESFET Fabrication
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Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH₃SiH₃ and C₃H₈ Sources
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Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
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Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
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Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
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Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
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Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
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Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
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Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

Abstract:

We have proposed a novel model of hydrogen etching of SiC based on thermal equilibrium and have confirmed the validity of our model through the analysis of H2 etching experiments. The experimental results obtained showed that the etching rate is expressed by a linear equation with the H2 flow rate, by an exponential function with the reciprocal of the temperature and by a power law with the pressure. These results agree well with the theoretical behaviors derived from our model.