Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property

Ho Keun  Song; Jeong Hyun Moon; Jeong Hyuk Yim; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.527-529.215

Paper Titles

Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH₃SiH₃ and C₃H₈ Sources
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Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
p.207

Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
p.211

Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
p.215

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
p.219

Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
p.223

Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
p.227

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
p.231

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Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property

Abstract:

In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, t-butylferrocene ([C14H17Fe]). Doping-induced crystallinity degradation showed different tendency depending on conducting type of substrate. The crystal quality of epilayer grown on n-type substrate was not degraded significantly despite of the Fe doping but in case of semi-insulating substrate, crystallinity was remarkably degraded as increasing iron contents. For measurement of resistivity of highly resistive iron-doped 4H-SiC epilayer, we used the on-resistance technique which is firstly attempted for measuring resistivity of epilayer. From on-resistance of epilayer measured by I-V, it is shown that the residual donor concentration of epilayer was decreased as increasing partial pressure of t-butylferrocene. The resistivity of iron-doped 4H-SiC epilayer was about 107 Ωcm. From this result, it is concluded that Fe could effectively act as a compensation center in the iron-doped 4H-SiC.