Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates

Wook Bahng; Hui Jong Cheong; In Ho Kang; Sang Cheol Kim; Ki Hyun Kim; Nam Kyun Kim

doi:10.4028/www.scientific.net/MSF.527-529.207

Paper Titles

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
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Highly Uniform SiC Epitaxy for MESFET Fabrication
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Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH₃SiH₃ and C₃H₈ Sources
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Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
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Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
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Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
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Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
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Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Selective Etching of Micropipes During Initial...

Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates

Abstract:

The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the surface of on-axis substrate in the presence of source gases. However, there were no circular etch pits on the surface of off-axis substrates. In addition, the surface etched by H2 gas did not show circular etch pits even on nearly on-axis substrates. The shape of the circular etch pits was similar to spiral one. The initial growth behavior of epilayers was also investigated with various C/Si ratios of source gases (0.6

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Materials Science Forum (Volumes 527-529)

Pages:

207-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.207

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Online since:

October 2006

Authors:

Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim

Keywords:

4H-SiC, C/Si Ratio, Epitaxy, Micropipe, On-Axis, Selective Etching

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