Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates

Abstract:

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The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the surface of on-axis substrate in the presence of source gases. However, there were no circular etch pits on the surface of off-axis substrates. In addition, the surface etched by H2 gas did not show circular etch pits even on nearly on-axis substrates. The shape of the circular etch pits was similar to spiral one. The initial growth behavior of epilayers was also investigated with various C/Si ratios of source gases (0.6

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

207-210

DOI:

10.4028/www.scientific.net/MSF.527-529.207

Citation:

W. Bahng et al., "Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 207-210, 2006

Online since:

October 2006

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$35.00

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