Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates

Abstract:

Article Preview

The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the surface of on-axis substrate in the presence of source gases. However, there were no circular etch pits on the surface of off-axis substrates. In addition, the surface etched by H2 gas did not show circular etch pits even on nearly on-axis substrates. The shape of the circular etch pits was similar to spiral one. The initial growth behavior of epilayers was also investigated with various C/Si ratios of source gases (0.6

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

207-210

Citation:

W. Bahng et al., "Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 207-210, 2006

Online since:

October 2006

Export:

Price:

$38.00

[1] N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino and H. Matsunami: Extended Abs. 19th Conf. on Solid State Devices and Materials, Tokyo (1987), p.227.

[2] W. Bahng, N. K. Kim, S. C. Kim, G. H. Song and E. D. Kim: Mater. Sci. Forum Vols. 389-393 (2002), p.863.

[3] H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Isumi, K. Nakayama, R. Ishii, K. Asano and Y. Sugawara: Mater. Sci. Forum Vols. 483-485 (2005), p.97.

[4] S. Nakamura, T. Kimoto and H. Matsunami: Jpn. J. Appl. Phys., 42 (2003), L846.

[5] S. Nishizawa and M. Pons: Mater. Sci. Forum Vols. 483-485 (2005), p.53.

[6] C. Hallin, Q. Wahab, I. Ivanov, P. Bergman and E. Janzén: Mater. Sci. Forum Vols. 457-460 (2004), p.193.

[7] H. Tsuchida, I. Kamata, T. Jikimoto, T. Miyanagi and K. Izumi: Mater. Sci. Forum Vols. 433-436 (2003), p.131.