Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers

Ze Hong Zhang; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.527-529.243

Paper Titles

Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
p.227

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
p.231

Ab Initio Studies of the Surface Reaction of Si₂C and SiC₂ with Si on the 4H-SiC (000-1) Surface
p.235

Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
p.239

Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
p.243

Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
p.247

SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology
p.251

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
p.255

Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
p.259

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Growth of Low Basal Plane Dislocation Density SiC...

Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers

Abstract:

A method was developed in our laboratory to grow low basal plane dislocation (BPD) density and BPD-free SiC epilayers. The key approach is to subject the SiC substrates to defect preferential etching, followed by conventional epitaxial growth. It was found that the creation of BPD etch pits on the substrates can greatly enhance the conversion of BPDs to threading edge dislocations (TEDs) during epitaxy, and thus low BPD density and BPD-free SiC epilayers are obtained. The reason why BPD etch pits can promote the above conversion is discussed. The SiC epilayer growth by this method is very promising in overcoming forward voltage drop degradation of SiC PiN diodes.