Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers

Andrew J. Trunek; Philip G. Neudeck; David J. Spry

doi:10.4028/www.scientific.net/MSF.527-529.247

Paper Titles

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
p.231

Ab Initio Studies of the Surface Reaction of Si₂C and SiC₂ with Si on the 4H-SiC (000-1) Surface
p.235

Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
p.239

Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
p.243

Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
p.247

SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology
p.251

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
p.255

Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
p.259

6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
p.263

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Experimental Observations of Extended Growth of...

Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers

Abstract:

We report on further observations of homoepitaxially grown 4H silicon carbide (SiC) cantilevers on commercial on-axis mesa patterned substrates. Mesa shapes with hollow interiors were designed to significantly increase the ratio of dislocation-free cantilever area to pregrowth mesa area. Mesas that did not contain axial screw dislocations (SD’s) continued to expand laterally until uncontrolled growth in the trench regions rises up to interfere / merge with the laterally expanding cantilevers. Molten KOH etching revealed high defect density in regions where trench growth merged with the laterally expanding cantilevers. The remaining portions of the cantilevers, except for central coalescence points, remained free of dislocations.