6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method

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We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a 1°-off c-plane SiC substrate by a closed-space sublimation method. By optimizing the size of single-crystal source materials in the growth system, a high-quality 6H-SiC epilayer with an X-ray diffraction rocking curve (0006) full-width at the half maximum (FWHM) of 38 arcsec was obtained. We also carried out doping of nitrogen and boron during the growth of the SiC epilayer. A strong donor-acceptor pair (DAP) emission at a peak wavelength of 570 nm under excitation by a 395 nm nitride-based light-emitting diode (LED) was observed. The 6H-SiC with DAP emission is promising for use as a phosphor in a nitride-based LED, because high-quality nitride layers can be grown on the SiC substrates with small off-oriented angles.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

263-266

Citation:

Y. Kawai et al., "6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 263-266, 2006

Online since:

October 2006

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$38.00

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