We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a 1°-off c-plane SiC substrate by a closed-space sublimation method. By optimizing the size of single-crystal source materials in the growth system, a high-quality 6H-SiC epilayer with an X-ray diffraction rocking curve (0006) full-width at the half maximum (FWHM) of 38 arcsec was obtained. We also carried out doping of nitrogen and boron during the growth of the SiC epilayer. A strong donor-acceptor pair (DAP) emission at a peak wavelength of 570 nm under excitation by a 395 nm nitride-based light-emitting diode (LED) was observed. The 6H-SiC with DAP emission is promising for use as a phosphor in a nitride-based LED, because high-quality nitride layers can be grown on the SiC substrates with small off-oriented angles.