Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace

Chi Kwon Park; Joon Ho An; Won Jae Lee; Byoung Chul Shin; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.527-529.267

Paper Titles

SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology
p.251

CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
p.255

Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
p.259

6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
p.263

Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
p.267

Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature
p.271

Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
p.275

Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
p.279

Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
p.283

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Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace

Abstract:

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate (30 μm/h) exhibited a low etch pit density (EPD) of ~2000 /cm2 and a low micropipe density (MPD) of 2 /cm2. The etched surface of a SiC epitaxial layer grown with a high growth rate (above 100 μm/h) contained a high EPD of ~3500 /cm2 and a high MPD of ~500 /cm2, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer.