Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Yuuichi Takeuchi, Mitsuhiro Kataoka, Tsunenobu Kimoto, Hiroyuki Matsunami, Rajesh Kumar Malhan

Abstract: In this work, we have developed an innovative epitaxial growth process named the “Migration Enhanced Embedded Epitaxial” (ME3) growth...

Authors: Y. Shishkin, Yue Ke, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Stephen E. Saddow

Abstract: Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried...

Authors: Can Hua Li, I. Bhat, T. Paul Chow

Abstract: We have previously reported on the selective growth of 4H-SiC epitaxial layers on a 4HSiC substrates in a chemical vapor deposition (CVD)...

Authors: Y. Kawai, Tomohiko Maeda, Yoshihiro Nakamura, Yoji Sakurai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi

Abstract: We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a 1°-off c-plane SiC substrate by a closed-space sublimation...

Authors: Chi Kwon Park, Joon Ho An, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino

Abstract: A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power...

Authors: Maher Soueidan, Gabriel Ferro, François Cauwet, L. Mollet, Christophe Jacquier, Ghassan Younes, Yves Monteil

Abstract: The vapour-Liquid-Solid mechanism was used for growing epitaxial SiC layers on onaxis 6H-SiC and 4H-SiC substrates. By feeding Al70Si30...

Authors: Gabriel Ferro, Maher Soueidan, Christophe Jacquier, Phillippe Godignon, Thomas Stauden, Jörg Pezoldt, Mihai Lazar, Josep Montserrat, Yves Monteil

Abstract: Al-Si and Ge-Si systems were studied for selective epitaxial growth (SEG) of 4H-SiC by the Vapour-Liquid-Solid mechanism. Al-Si and Ge-Si...

Authors: H. Du, Marek Skowronski, Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. Anthony Powell

Abstract: Cross-sectional transmission electron microscopy (TEM) was used to investigate the extended defects in 3C-SiC films deposited on atomically...

Authors: Rositza Yakimova, Gholam Reza Yazdi, Nut Sritirawisarn, Mikael Syväjärvi

Abstract: We report on growth of 3C-SiC by sublimation process in vacuum with the aim to ultimately select conditions for single polytype growth of...

Authors: Maher Soueidan, Gabriel Ferro, J. Stoemenos, Efstathios K. Polychroniadis, Didier Chaussende, F. Soares, Sandrine Juillaguet, Jean Camassel, Yves Monteil

Abstract: Using the Vapor-Liquid-Solid mechanism in Ge-Si melts we have grown 3C-SiC layers on top of <0001>-oriented, Si face, 6H-SiC substrates....


Showing 61 to 70 of 379 Paper Titles