Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Nobuyoshi Yashiro, Akihiro Yauchi, Toru Ujihara, Kazuo Nakajima

Abstract: We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT)....

Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Pierre Ferret, J. Pesenti, Alain Basset, Antoine Passero, Alkyoni Mantzari, Efstathios K. Polychroniadis, Carole Balloud, P. Soares, Jean Camassel

Abstract: Cubic-silicon carbide crystals have been grown from solution by using the traveling-zone method. In this technique a molten silicon zone...

Authors: Shin Ichi Nishizawa, Michel Pons

Abstract: From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes. There are lots of...

Authors: Bernd Thomas, Christian Hecht, René A. Stein, Peter Friedrichs

Abstract: The rapid market development for SiC-devices during the last years can be attributed particularly to the success in supplying high-quality...

Authors: Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das, Christer Hallin, Brett A. Hull, Erik Janzén, H. Lendenmann, Michael J. O'Loughlin, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.

Abstract: Forward voltage instability, or Vf drift, has confounded high voltage SiC device makers for the last several years. The SiC community has...

Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

Abstract: We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated...

Authors: Takashi Aigo, M. Sawamura, Tatsuo Fujimoto, Masakazu Katsuno, Hirokatsu Yashiro, Hiroshi Tsuge, Masashi Nakabayashi, Taizo Hoshino, Noboru Ohtani

Abstract: 4H-SiC epitaxial layers on Carbon-face (C-face) substrates were grown by a low-pressure hot-wall type chemical vapor deposition system. The...

Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, R.T. Leonard, D.A. McClure

Abstract: Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE...

Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F. Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Abstract: The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the...

Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuk, Colin Wood

Abstract: The advantages of the CH3Cl carbon precursor were investigated in order to achieve good-quality homoepitaxial layers of the 4H-SiC polytype...


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