Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/

Paper Title Page

Authors: C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, Cengiz M. Balkas

Abstract: The move towards commercialization of SiC based devices places increasing demands on the quality of the substrate material. While the...

Authors: A. Gupta, E. Semenas, Ejiro Emorhokpor, J. Chen, Ilya Zwieback, Andrew E. Souzis, Thomas Anderson

Abstract: Over the past year, II-VI has transitioned from 2” to 3” commercial SiC substrates. Large-diameter semi-insulating 6H-SiC and n-type 4H-SiC...

Authors: Mark A. Fanton, R.L. Cavalero, R.G Ray, B.E. Weiland, W.J. Everson, David Snyder, Rick D. Gamble, Ed Oslosky

Abstract: The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by...

Authors: Qiang Li, A.Y. Polyakov, Marek Skowronski, Edward K. Sanchez, Mark J. Loboda, Mark A. Fanton, Timothy Bogart, Rick D. Gamble, N.B. Smirnov, Yuri N. Makarov

Abstract: For undoped 6H-SiC boules grown by physical vapor transport the variations of resistivity, of the type and density of deep electron and...

Authors: Kwan Mo Kim, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, Eun Dong Kim

Abstract: The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the...

Authors: Darren M. Hansen, Gil Chung, Mark J. Loboda

Abstract: A detailed understanding of the incorporation of N2 gas during PVT growth of SiC is required to achieve high performance, low resistivity...

Authors: Didier Chaussende, Peter J. Wellmann, M. Ucar, Michel Pons, Roland Madar

Abstract: The development of the Continuous Feed Physical Vapour Transport (CF-PVT) process requires a perfect control of each phenomenon in the...

Authors: Govindhan Dhanaraj, Yi Chen, Michael Dudley, Hui Zhang

Abstract: Bulk crystals and epitaxial layers of 6H SiC have been grown and their surface morphologies have been investigated. Seeded sublimation has...

Authors: Guy Chichignoud, Laurent Auvray, Elisabeth Blanquet, Mikhail Anikin, Etienne Pernot, Jean Marie Bluet, Patrick Chaudouët, Michel Mermoux, Catherine Moisson, Fabrice Letertre, Michel Pons, Roland Madar

Abstract: The transfer by wafer-bonding of single-crystalline SiC thin films to a polycrystalline SiC support to obtain a “quasi-wafer” is an...

Authors: Peter J. Wellmann, Ralf Müller, Michel Pons

Abstract: We have studied the impact of the chemical nature of additional gases fed into the modified physical vapor transport (M-PVT) growth cell....


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